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mil-prf-19500/255n 15 february 2002 superseding mil-prf-19500/255m 20 march 2001 performance specification semiconductor device, transistor , npn, silicon, switching, types 2n2221a, 2n2221al, 2n2222a, 2n2222al, 2n 2221aua 2n2222aua, 2n2221aub, and 2n2222aub, jan, janj, ja ntx, jantxv, jantxvd, jantxvh, jantxvm, jantxvr, jans, jansd, jansh, jansm, jansr, janhc, janhcm, janhcd, janhcr, janhch, jankc, jankcm, jankcd, jankcr, and jankch this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for npn, silic on, switching transistors. five levels of product assurance are provided for each encaps ulated device type as specified in mil-prf-19500, and two levels of product assurance are provided for each unencaps ulated device type. provisions for radiation hardness assurance (rha) to four radiation levels is prov ided for jantxv jans, janhc, and jankc product assurance levels. rha level designators ?m?, ?d?, ?r?, and ?h? ar e appended to the device prefix to identify devices, which have passed rha requirements. * 1.2 physical dimensions . see figure 1 (similar to t0-18), figures 2 and 3 (surface mount case outlines ua and ub), and figures 4, 5, and 6 (janhc and jankc). 1.3 maximum ratings . types p t t a = +25 c i c v cbo v ceo v ebo t op and t stg r ja 2n2221a, l, 2n2222a, l 2n2221aua, 2n2222aua 2n2221aub, 2n2222aub w (1) 0.5 (1) 0.5 (2) 0.65 (2) 0.65 (1) 0.50 (1) 0.50 ma dc 800 800 800 800 800 800 v dc 75 75 75 75 75 75 v dc 50 50 50 50 50 50 v dc 6 6 6 6 6 6 c -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 c/w 325 325 210 210 325 325 (1) derate linearly 3.08 mw/ c above t a = +37.5 c. (2) derate linearly 4.76 mw/ c above t a = +63.5 c. amsc n/a fsc 5961 distribution statement a. approved for public release; distribution is unlimited. inch-pound beneficial comments (recommendations, addi tions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: defense suppl y center columbus, attn: dscc-vac, p.o. box 3990 columbus, oh 43216-5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter. the documentation and process conversion measures necessary to comply with this revision shall be completed by 15 may 2002.
mil-prf-19500/255n 2 1.4 primary electrical characteristics at t a = +25 c . h fe at v ce = 10 v dc h fe1 i c = 0. 1 ma dc h fe2 i c = 1.0 ma dc h fe3 i c = 10 ma dc h fe4 (1) i c = 150 ma dc h fe5 (1) i c = 500 ma dc min max l, ua, ub 2n2221a 2n2222a 30 50 l, ua, ub 2n2221a 2n2222a 35 75 150 325 l, ua, ub 2n2221a 2n2222a 40 100 l, ua, ub 2n2221a 2n2222a 40 100 120 300 l, ua, ub 2n2221a 2n2222a 20 30 types limit /h fe / f = 100 mhz c obo 100 khz switching (saturated) v ce = 20 v dc i c = 20 ma dc f 1 mhz v cb = 10 v dc i e = 0 t on see figure 7 t off see figure 8 2n2221a, 2n2222a l, ua, ub min max 2.5 pf 8 ns 35 ns 300 types limit v ce(sat)1 (1) i c = 150 ma dc i b = 15 ma dc v ce(sat)2 (1) i c = 500 ma dc i b = 50 ma dc v be(sat)1 (1) i c = 150 ma dc i b = 15 ma dc v be(sat)2 (1) i c = 500 ma dc i b = 50 ma dc 2n2221a, 2n2222a l, ua, ub min max v dc 0.3 v dc 1.0 v dc 0.6 1.2 v dc 2.0 (1) pulsed see 4.5.1.
mil-prf-19500/255n 3 dimensions symbol inches millimeters note min max min max cd .178 .195 4.52 4.95 ch .170 .210 4.32 5.33 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7,8 ll .500 .750 12.70 19.05 7,8,13 lu .016 .019 0.41 0.48 7,8 l1 .050 1.27 7,8 l2 .250 6.35 7,8 p .100 2.54 q .030 0.76 5 tl .028 .048 0.71 1.22 3,4 tw .036 .046 0.91 1.17 3 r .010 0.25 10 45 tp 45 tp 6 1, 2, 9, 11, 12, 13 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, tl shall be held for a minimum length of .011 inch (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maxi mum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure shown in figure 2. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all three leads. 9. the collector shall be internally connected to the case. 10. dimension r (radius) applies to both inside corners of tab. 11. in accordance with ansi y14.5m, diameters are equivalent to x symbology. 12. lead 1 = emitter, lead 2 = base, lead 3 = collector. 13. for l suffix devices, dimension ll = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. * figure 1. physical di mensions (similar to to-18) .
mil-prf-19500/255n 4 dimensions symbol inches millimeters note min max min max a .061 .075 1.55 1.90 3 a1 .029 .041 0.74 1.04 b1 .022 .028 0.56 0.71 b2 .075 ref 1.91 ref b3 .006 .022 0.15 0.56 5 d .145 .155 3.68 3.93 d1 .045 .055 1.14 1.39 d2 .0375 bsc .952 bsc d3 .155 3.93 e .215 .225 5.46 5.71 e3 .225 5.71 l1 .032 .048 0.81 1.22 l2 .072 .088 1.83 2.23 l3 .003 .007 0.08 0.18 5 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. dimension "a" controls the overall package thickne ss. when a window lid is used, dimension "a" must increase by a minimum of .010 inch (0. 254 mm) and a maximum of .040 inch (1.020 mm). 4. the corner shape (square, notch, radius, etc.) may va ry at the manufacturer's option, from that shown on the drawing. 5. dimensions "b3" minimum and "l3" minimum and the appropriately castellation length define an unobstructed three-dimensional spac e traversing all of the ceramic layers in which a castellation was designed. (castellations are required on bottom two layers, optional on top ceramic layer.) dimension "b3" maximum and "l3" maximum define the maximum width and depth of the castellation at any point on its surface. measurement of these dim ensions may be made prior to solder dipping. figure 2. physical dimensi ons, surface mount (ua version) .
mil-prf-19500/255n 5 dimensions symbol inches millimeters note min max min max a .046 .056 0.97 1.42 a1 .017 .035 0.43 0.89 b1 .016 .024 0.41 0.61 b2 .016 .024 0.41 0.61 b3 .016 .024 0.41 0.61 d .085 .108 2.41 2.74 d1 .071 .079 1.81 2.01 d2 .035 .039 0.89 0.99 d3 .085 .108 2.41 2.74 e .115 .128 2.82 3.25 e3 .128 3.25 l1 .022 .038 0.56 0.96 l2 .022 .038 0.56 0.96 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. figure 3. physical dimensi ons, surface mount (ub version) .
mil-prf-19500/255n 6 physical characteristics: b-version chip size: 0.023 x 0.023 mils 0.002 mils. chip thickness: 0.010 0.0015 mils. top metal: aluminum 15,000 ? minimum, 18,000 ? nominal. back metal: a. al/ti/ni/ag 15k ? /5k ? /10k ? /10k ? . b. gold 2,500 ? minimum, 3,000 ? nominal. c. eutectic die mount - no metal. glassivation: si 3 n 4 2,000 ? minimum, 8,000 ? nominal. backside: collector. bonding pad: b = 0.0042 x 0.0042 mils, e = 0.0042 x 0.0042 mils. figure 4. janhc and jankc (b-version) die dimensions . e b
mil-prf-19500/255n 7 e b die size: .020 x .020 inch (0.508 mm x 0.508 mm). die thickness: .008 .0016 inch (0.2032 mm 0.04064 mm). base bonding pad: .004 x .004 inch (0.1016 mm x 0.1016 mm). emitter bonding pad: .004 x .004 inch. back metal: gold, 6,500 1950 ? . top metal: aluminum, 27,000 3,000 ? . back side: collector. glassivation: sio 2 , 7,500 1,500 ? . figure 5. janhc and jankc (c-version) die dimensions .
mil-prf-19500/255n 8 die size. .0198 x .0198 inch .0005 inch (0.50292 x 0.50292 mm 0.0127 mm). die thickness .010 .001 inch (0.254 0.0254 mm) nominal. top metal aluminum, 21,000 ? nominal. back metal gold 2,000 ? nominal. backside collector. bonding pad b = .0041 x .0059 inch (0.10414 x 0.14986 mm), e = .0038 x .0057 inch (0.09652 x 0.14478 mm). glassivation silicon oxide. figure 6. janhc and jankc (d-versi on for 2n2222a, and 2n2221a) die dimensions .
mil-prf-19500/255n 9 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation production services (daps), 700 robbins av enue, building 4d (dpm-dodssp), philadelphia, pa 19111-5094) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500 and as follows. ua, ub, - - - - - - - surface mount case outlines (see figures 2 and 3). * 3.4 interface and physical dimensions . the interface and physical dimens ions shall be as specified in mil-prf-19500, and on figures 1, 2, 3, 4, 5, and 6 herein. 3.4.1 lead finish . lead finish shall be solderable in accordanc e with mil-prf-19500, mil-std-750, and herein. where a choice of lead finish is desired, it sha ll be specified in the acquisition document (see 6.2).
mil-prf-19500/255n 10 3.5 radiation hardness assurance (rha) . radiation hardness assurance r equirements, pin designators, and test levels shall be as defined in mil-prf-19500. 3.6 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table i. 3.7 electrical test requirements . the electrical test requirements sha ll be as specified in table i, subgroup 2. 3.8 marking . marking shall be in accordance with mil-prf-19500, except for the ub suffix package. marking on the ub package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo. the prefixes jan, jantx, jantxv, ja nj, and jans can be abbreviated as j, jx , jv, jj, and js respectively. the "2n" prefix and the "aub" suffix can also be omitted. 3.9 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500 and 4.4.5 herein. 4.2.1 janj devices . for janj level, 3.3.1 through 3.3.1.3 of mil-prf-19500 shall apply, except as modified herein. supplier imposed requirements as well as al ternate screens, procedures, and/or controls shall be documented in the qm plan and must be submitted to the qualifying activity for approval. when alternate screens procedures, and/or controls are used in lieu of t he janj screens herein equivalency shall be proven and documented in the qm plan . radiation characterization may be submi tted in the qm plan at the option of the manufacturer, however, 3.3.1.1 of mil-prf-19500 is not requi red. die lot controls and rework requirements shall be in accordance with 3.13 of mil-prf-19500 and d.3.13.2.1 for jans level. lot formation and conformance inspection requirements for janj shall be t hose used for jantxv devices as a minimum 4.2.2 janj qualification . for janj qualification, 4.4.2.1 herein s hall be performed as required by the qualifying activity. a jans certified supplier may supply janj product utilizing the janj scr eening flow in 4.3 herein. 4.2.3 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil-prf-19500. * 4.2.4 group e qualification . group e inspection shall be performed for qua lification or re-qualification only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of table iii tests, the tests specified in table iii herein must be performed by the first inspection lot of this revision to maintain qualification.
mil-prf-19500/255n 11 * 4.3 screening (jans, janj, jantx, and jantxv levels only) . screening shall be in accordance with table iv mil-prf-19500, and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limit s of table i herein shall not be acceptable. screen (see table iv of measurement mil-prf-19500) jans level janj level jantx and jantxv levels 2 optional optional optional 3a required required required 3b not applicable not applicable not applicable 3c thermal impedance, method 3131 of mil-std-750 thermal impedance, method 3131 of mil-std-750 thermal impedance, method 3131 of mil-std-750 4 required optional optional 5 required required not applicable 7a and 7b required required required 8 required not required not required 9 i cbo2 , h fe4 i cbo2 , h fe4 not applicable 10 48 hours minimum 48 hours minimum 48 hours minimum 11 i cbo2 ; h fe4 ; ? i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater. ? h fe4 = 15 percent i cbo2 ; h fe4 ; ? i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater. ? h fe4 = 15 percent i cbo2 ; h fe4 12 see 4.3.2 240 hours minimum see 4.3.2 240 hours minimum see 4.3.2 80 hours minimum 13 subgroups 2 and 3 of table i herein; ? i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater; ? h fe4 = 15 percent subgroups 2 and 3 of table i herein; ? i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater; ? h fe4 = 15 percent subgroup 2 of table i herein; ? i cbo2 = 100 percent of initial value or 5 na dc, whichever is greater; ? h fe4 = 15 percent 14a and 14b optional optional optional 15 required required not required 16 required required not required 4.3.1 screening (janhc and jankc) . screening of janhc and jankc die shall be in accordance with mil-prf-19500 "discrete semiconductor die/chip lot accept ance". burn-in duration for the jankc level follows jans requirements; the janhc follows jantx requirements.
mil-prf-19500/255n 12 4.3.2 power burn-in conditions . power burn-in conditions are as follows: v cb = 10-30 v dc. power shall be applied to achieve t j = +135 c minimum using a minimum p d = 75 percent of p t maximum rated as defined in 1.3. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500, and as specified herein. if alternate screening is being perfo rmed in accordance with mil-prf-19500, a sample of screened devices shall be submitted to and pass the require ments of group a1 and a2 inspection only (table vib, group b, subgroup 1 is not required to be performed again if group b has already been satisfied in accordance with 4.4.2). 4.4.1 group a inspection. group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table via (jans) of mil-prf-19500 and 4.4.2.1. el ectrical measurements (end- points) and delta requirements shall be in accordance with group a, subgroup 2 and 4.5.3 herein: delta requirements only apply to subgroups b4, and b5. see 4.4.2.2 for jan, janj, jantx, and jantxv group b testing. electrical measurements (end-points) and delta requirements for jan, janj, jantx, and jantxv shall be after each step in 4.4.2.2 and shall be in accordance with group a, subgroup 2 and 4.5.3 herein. * 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500. subgroup method condition b4 1037 v cb = 10 v dc. b5 1027 v cb = 10 v dc; p d 100 percent of maximum rated p t (see 1.3). (note: if a failure occurs, resubmission shall be at the test conditions of the original sample.) option 1: 96 hours minimum sample size in accordance with mil-prf-19500, table via, adjust t a or p d to achieve t j = +275 c minimum. option 2: 216 hours minimum, sample size = 45, c = 0; adjusted t a or p d to achieve a t j = +225 c minimum. 4.4.2.2 group b inspection, (jan, janj, jantx, and jantxv) . separate samples may be used for each step. in the event of a group b failure, the manufacturer may pu ll a new sample at double size from either the failed assembly lot or from another assembly lot from the same wa fer lot. if the new ?assembly lot? option is exercised, the failed assembly lot shall be scrapped. step method condition 1 1039 steady-state life: test condition b, 340 hours minimum, v cb = 10 - 30 v dc, power shall be applied to achieve t j = +150 c minimum using a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. n = 45 devices, c = 0. 2 1039 the steady-state life test of step 1 shall be extended to 1,000 hrs for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 high-temperature life (non-operating), t = 340 hours, t a = +200 c. n = 22, c = 0.
mil-prf-19500/255n 13 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, janj, jantx, and jantxv samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from eac h wafer lot. for jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2, conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, janj, jantx, and jantxv) may be pulled prior to the application of final lead finish. 4.4.3 group c inspection, group c inspection shall be conducted in accordance with the test and conditions specified for subgroup testing in table vii of mil-prf-19500, and in 4.4.3.1 (jans) and 4.4.3.2 (jan, janj, jantx, and jantxv) herein for group c testing. electrical meas urements (end-points) and delta requirements shall be in accordance with group a, subgroup 2 and 4.5.3 herei n; delta requirements only apply to subgroup c6. 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500. subgroup method condition c2 2036 test condition e; (method 2036 not applicable for ua and ub devices). c6 1026 1,000 hours at v cb = 10 v dc; power shall be applied to achieve t j = +150 c minimum and a minimum of p d = 75 percent of maximum rated p t as defined in 1.3. 4.4.3.2 group c inspection, table vii (j an, janj, jantx, and jantxv) of mil-prf-19500 . subgroup method condition c2 2036 test condition e; not applicable for ua and ub devices. c5 3131 r ja (see 1.3). c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and lead fi nish procured to the same specification which is submitted to and passes group a tests for conformance inspec tion. when the final lead finish is solder or any plating prone to oxidation at high temper ature, the samples for c6 life test may be pulled prior to the application of final lead finish. testing of a subgroup using a singl e device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 group d inspection. conformance inspection for hardness assu red jans and jantxv types shall include the group d tests specified in table ii herein. these te sts shall be performed as required in accordance with mil-prf-19500 and method 1019 of mil-std-750, for tota l ionizing dose or method 1017 of mil-std-750 for neutron fluence as applicable. * 4.4.5 group e inspection . group e inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in appendix e, table ix of mil-prf-19500 and as specified in table iii herein. electrical measurements (end-points) shall be in accordance with table i, subgroup 2 herein; except, z jx need not be performed. delta measurements shall be in a ccordance with the applicable steps of 4.5.3.
mil-prf-19500/255n 14 4.5 method of inspection. methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.5.1 pulse measurements. conditions for pulse measurement shall be as specified in section 4 of mil-std-750. 4.5.2 input capacitance . this test shall be conducted in accordance with method 3240 of mil-std-750, except the output capacitor shall be omitted. 4.5.3 delta requirements . delta requirements shall be as specified below: step inspection mil-std-750 symbol limit unit method conditions 1 collector-base cutoff current 3036 bias condition d, v cb = 60 v dc ? i cb02 (1) 100 percent of initial value or 8 na dc, whichever is greater. 2 forward current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed see 4.5.1 ? h fe4 (1) 25 percent change from initial reading. (1) devices which exceed the group a limits for this test shall not be accepted.
mil-prf-19500/255n 15 table i. group a inspection . inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroup 1 2 / visual and mechanical 3 / examination 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / resistance to solvents 3 / 4 / 5 / 2026 1022 n = 15 leads, c = 0 n = 15 devices, c = 0 temp cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 hermetic seal 4 / 1071 n = 22 devices, c = 0 fine leak gross leak electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs n = 11 wires, c = 0 decap internal visual (design verification) 4 / 2075 n = 4 devices, c = 0 subgroup 2 collector to base cutoff current 3036 v cb = 75 v dc i cbo1 10 a dc emitter to base cutoff current 3061 v eb = 6 v dc i ebo1 10 a dc breakdown voltage, collector to emitter 3011 bias condition d; i c = 10 ma dc; pulsed (see 4.5.1) v (br)ceo 50 v dc collector to emitter cutoff current 3041 bias condition c; v ce = 50 v dc i ces 50 na dc collector to base cutoff current 3036 bias condition d; v cb = 60 v dc i cbo2 10 na dc emitter to base cutoff current 3061 bias condition d; v eb = 4 v dc i ebo2 10 na dc forward-current transfer ratio 3076 v ce = 10 v dc; i c = 0.1 ma dc h fe1 2n2221a, l, ua, ub 30 2n2222a, l, ua, ub 50 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 1.0 ma dc h fe2 2n2221a, l, ua, ub 35 150 2n2222a, l, ua, ub 75 325 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc h fe3 2n2221a, l, ua, ub 40 2n2222a, l, ua, ub 100 see footnotes at end of table.
mil-prf-19500/255n 16 table i. group a inspection - continued. inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroup 2 - continued forward-current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc; pulsed (see 4.5.1) h fe4 2n2221a, l, ua, ub 40 120 2n2222a, l, ua, ub 100 300 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 500 ma dc; pulsed (see 4.5.1) h fe5 2n2221a, l, ua, ub 20 2n2222a, l, ua, ub collector-emitter saturation voltage 3071 i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) v ce(sat)1 30 0.3 v dc collector-emitter saturation voltage 3071 i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1) v ce(sat)2 1.0 v dc base-emitter saturation voltage 3066 test condition a; i c = 150 ma dc; i b = 15 ma dc; pulsed (see 4.5.1) v be(sat)1 0.6 1.2 v dc base-emitter saturation voltage 3066 test condition a; i c = 500 ma dc; i b = 50 ma dc; pulsed (see 4.5.1) v be(sat)2 2.0 v dc subgroup 3 high temperature operation t a = +150 c collector to base cutoff current 3036 bias condition d; v cb = 60 v dc i cbo3 10 a dc low temperature operation t a = -55 c forward-current transfer ratio 3076 v ce = 10 v dc; i c = 10 ma dc h fe6 2n2221a, l, ua, ub 15 2n2222a, l, ua, ub 35 subgroup 4 small-signal short-circuit forward current transfer ratio 3206 v ce = 10 v dc; i c = 1 ma dc; f = 1 khz h fe 2n2221a, l, ua, ub 30 2n2222a, l, ua, ub 50 magnitude of small-signal short- circuit forward current transfer ratio 3306 v ce = 20 v dc; i c = 20 ma dc; f = 100 mhz /h fe / 2.5 open circuit output capacitance 3236 v cb = 10 v dc; i e = 0; 100 khz f 1 mhz c obo 8 pf see footnotes at end of table.
mil-prf-19500/255n 17 * table i. group a inspection - continued. inspection 1 / mil-std-750 limit unit method conditions symbol min max subgroup 4 - continued input capacitance (output open- circuited) saturated turn-on time 3240 v eb = 0.5 v dc; i c = 0; 100 khz f 1 mhz (see figure 7) c ibo t on 25 35 pf ns saturated turn-off time (see figure 8) t off 300 ns subgroups 5 and 6 not required 1 / for sampling plan see mil-prf-19500. 2 / for resubmission of failed subgroup a1, double the sample size of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the ent ire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil-prf-19500/255n 18 table ii. group d inspection . inspection 1 / 2 / mil-std-750 limit unit method conditions symbol min max subgroup 1 neutron irradiation 1017 collector to base cutoff current 3036 bias condition d; v cb = 60 v dc i cbo1 20 na dc forward-current transfer ratio 3076 v ce = 10 v dc; i c = 0.1 ma dc h fe1 m2n2221a, d2n2222a, 35 r2n2222a, 34 h2n2222a 10 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 1.0 ma dc h fe2 m2n2221a, d2n2222a, r2n2222a, h2n2222a 49 49 21 325 forward-current transfer ratio m2n2221a, d2n2222a, 3076 v ce = 10 v dc; i c = 10 ma dc h fe3 89 r2n2222a, h2n2222a 89 49 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 150 ma dc h fe4 m2n2221a, d2n2222a, r2n2222a, h2n2222a 90 90 45 300 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 500 ma dc h fe5 27 collector-emitter saturation voltage 3071 i c = 150 ma dc; i b = 15 ma dc; v ce(sat)1 33 v dc collector-emitter saturation voltage 3071 i c = 500 ma dc; i b = 50 ma dc; v ce(sat)2 1.1 v dc subgroup 2 total dose irradiation 1019 collector to base cutoff current 3036 bias condition d; v cb = 60 v dc i cbo1 20 na dc forward-current transfer ratio 3076 v ce = 10 v dc; i c = 0.1 ma dc h fe1 m2n2221a, d2n2222a, r2n2222a, h2n2222a 45 34 10 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 1.0 ma dc h fe2 m2n2221a, d2n2222a, r2n2222a, 67 60 325 h2n2222a 21 see footnotes at end of table.
mil-prf-19500/255n 19 table ii. group d inspection - continued. inspection 1 / 2 / mil-std-750 limit unit method conditions symbol min max subgroup 2 - continued forward-current transfer ratio m2n2221a, d2n2222a, r2n2222a, h2n2222a 3076 v ce = 10 v dc; i c = 10 ma dc h fe3 90 90 50 forward-current transfer ratio m2n2221a, d2n2222a, r2n2222a, h2n2222a 3076 v ce = 10 v dc; i c = 150 ma dc h fe4 90 90 45 forward-current transfer ratio 3076 v ce = 10 v dc; i c = 500 ma dc; h fe5 27 collector-emitter saturation voltage 3071 i c = 150 ma dc; i b = 15 ma dc; v ce(sat)1 .33 v dc collector-emitter saturation voltage 3071 i c = 500 ma dc; i b = 50 ma dc; v ce(sat)2 1.1 v dc 1 / tests to be performed on all devices. 2 / for sampling plan, see mil-prf-19500.
mil-prf-19500/255n 20 * table iii. group e inspection (all qua lity levels) - for qualification only . mil-std-750 inspection method conditions qualification subgroup 1 temperature cycling (air to air) hermetic seal fine leak gross leak electrical measurements subgroup 2 intermittent life electrical measurements 1051 1071 1037 test condition c, 500 cycles see group a, subgroup 2 and 4.5.3 herein. intermittent operation life: v cb = 10 v dc , 6000 cycles see group a, subgroup 2 and 4.5.3 herein. 45 devices c = 0 45 devices c = 0 subgroups 3, 4, 5, 6, and 7 not applicable subgroup 8 45 devices c = 0 reverse stability 1033 condition a for devices 400 v, condition b for devices < 400 v.
mil-prf-19500/255n 21 notes: 1. the rise time (t r ) of the applied pulse shall be 2.0 ns, duty cycle 2 percent, and the generator source impedance shall be 50 ? . 2. sampling oscilloscope: z in 100 k ? , c in 12 pf, rise time 5 ns. * figure 7. saturated turn-on switching time test circuit . notes: 1. the rise time (t r ) of the applied pulse shall be 2.0 ns, duty cycle 2 percent, and the generator source impedance shall be 50 ? . 2. sampling oscilloscope: z in 100 k ? , c in 12 pf, rise time 5 ns. * figure 8. saturated turn-o ff switching time test circuit .
mil-prf-19500/255n 22 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging ac tivity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or expl anatory nature that may be helpful, but is not mandatory.) 6.1 intended use. the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements. acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2). c. packaging requirements (see 5.1). d. lead formation and finish may be specified (see 3.4.1). e. type designation and product assurance level. * f. for die acquisition, the janhc or jankc letter version shall be specified (see figures 4 through 6) as well as the rha designer, if applicable. the janhca/jankca die version is obsolete as of the date of this revision. other letter versions should be used. g. surface mount designation if applicable. 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: dscc/ vqe, p.o. box 3990, columbus, oh 43216-5000. 6.4 supersession information . devices covered by this specificat ion supersede the manufacturers' and users' part or identifying number (pin). the term pin is equiva lent to the term part number which was previously used in this specification. this information in no way implies t hat manufacturers' pin's are suit able as a substitute for the military pin.
mil-prf-19500/255n 23 * 6.5 suppliers of janhc and jankc die . the qualified janhc and jankc suppliers with the applicable letter version (example janhcb2n2221a) will be identified on the qm l. the janhca/jankca die version is obsolete as of the date of this revision. die ordering information (1) pin manufacturer 43611 34156 12969 2n2221a 2n2222a janhcb2n2221a janhcb2n2222a janhcc2n2221a janhcc2n2222a janhcd2n2221a janhcd2n2222a (1) for jankc level, replace janhc with jankc. * 6.6 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2564) nasa - na dla - cc review activities: army - ar, mi, sm navy - as, mc air force - 19, 71, 99
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/255n 2. document date 15 february 2002 3. document title semiconductor device, transistor, npn, silicon, switching, types 2n2221a, 2n2221al, 2n2222a, 2n2222al, 2n2221aua 2n2222aua, 2n2221aub, and 2n2222aub, jan, janj , jantx, jantxv, jantxvd, jantxvh, jantxvm, jantxvr, jans, jansd, jansh, jansm, jansr, janhc, janhcm, janhcd, janhcr, janhch, jankc, jankcm, jankcd, jankcr, and jankch 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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